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INTEGRATED CIRCUITS
DATA SHEET
TEA5710; TEA5710T AM/FM radio receiver circuit
Product specification File under Integrated Circuits, IC01 March 1994
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
FEATURES * Wide supply voltage range: 2.0 to 12 V * Low current consumption: 7.5 mA at AM, 9.0 mA at FM * High selectivity with distributed IF gain * LED driver for tuning indication * High input sensitivity: 1.6 mV/m (AM), 2.0 V (FM) for 26 dB S/N * Good strong signal behaviour: 10 V/m at AM, 500 mV at FM * Low output distortion: 0.8% at AM, 0.3% at FM * Designed for simple and reliable PC-board layout * High impedance MOSFET input on AM DESCRIPTION APPLICATIONS
TEA5710; TEA5710T
* Portable AM/FM radio * Clock radio * Personal headphone radio
The TEA5710 is a high performance Bimos IC for use in AM/FM radios. All necessary functions are integrated: from AM and FM front-end to detector output stages.
QUICK REFERENCE DATA Conditions AM: fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. Conditions FM: fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL VP IP PARAMETER positive supply voltage supply current in AM mode in FM mode Tamb AM performance Vin1 V13 THD FM performance Vin3 V13 THD RF sensitivity AF output voltage total harmonic distortion 1.0 47 - 2.0 58 0.3 3.8 69 0.8 V mV % RF sensitivity AF output voltage total harmonic distortion 40 36 - 55 45 0.8 70 70 2.0 V mV % operating ambient temperature range 5.6 7.3 -15 7.5 9.0 - 9.9 11.2 +60 mA mA C 2.0 MIN. - TYP. 12 MAX. V UNIT
ORDERING INFORMATION EXTENDED TYPE NUMBER TEA5710 TEA5710T Notes 1. SOT234-1; 1996 August 27. 2. SOT137-1; 1996 August 27. PACKAGE PINS 24 24 PIN POSITION SDIL SO24L MATERIAL plastic plastic CODE SOT234AG(1) SOT137A(2)
March 1994
2
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
FM-RFI 1 24
FM-RFO 20
FM-MIXER 4 FM MIXER
FM-IF1I 6
FM-RF1O 8 FM IF 1
FM-IF2I 10 FM IF 2
FM-DEM 12 FM DETECTOR
RFGND
FM FRONT-END
FM-OSC VP RIPPLE VSTABA VSTABB IFGND AM-OSC
18 16 22 5 9 11 17 AM OSCILLATOR AGC AM/FM INDICATOR 15 IND STABILIZER FM OSCILLATOR FM 14 AM/FM SWITCH 21 AM/FM
TEA5710 TEA5710T
AM
AM-AGC/ FM-AFC
AM-RFI
23
AM FRONT-END
AM MIXER
AM-IF
AM DETECTOR
13
AF
3 AM-MIXER
2 AM-IF1I
7 AM-IF2I/O
19 SUBGND
MGE106
Fig.1 Block diagram.
March 1994
3
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
PINNING SYMBOL FM-RFI AM-IF1I AM-MIXER FM-MIXER VSTABA FM-IF1I AM-IF2I/O FM-IF1O VSTABB FM-IF2I IFGND FM-DEM AF AM/FM IND VP AM-OSC FM-OSC SUBGND FM-RFO AM-AGC/FM-AFC RIPPLE AM-RFI RFGND PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
TEA5710; TEA5710T
DESCRIPTION FM-RF aerial input (input impedance typ. 50 ) input from IFT or ceramic filter (input impedance typ. 3 k) open-collector output to IFT output to ceramic IF filter (output impedance typ. 330 ) stabilized internal supply voltage (A) first FM-IF input (input impedance typ. 330 ) input/output to IFT; output: current source first FM-IF output (output impedance typ. 330 ) stabilized internal supply voltage (B) second FM-IF input (input impedance typ. 330 ) ground of IF and detector stages ceramic discriminator pin audio output (output impedance typ. 5 k) switch terminal: open for AM; ground for FM field-strength dependent indicator positive supply voltage parallel tuned AM-OSC circuit to ground parallel tuned FM-OSC circuit to ground substrate and RF ground parallel tuned FM-RF circuit to ground AGC/AFC capacitor pin ripple capacitor pin parallel tuned AM aerial circuit to ground (total input capacitance typ. 3 pF) FM-RF ground
March 1994
4
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, halfpage
handbook, halfpage
FM-RFI AM-IFI AM-MIXER FM-MIXER VSTABA FM-IF1I AM-IF2I/O FM-IF1O VSTABB
1 2 3 4 5 6
24 RFGND 23 AM-RFI 22 RIPPLE 21 AM-AGC/FM-AFC 20 FM-RFO 19 SUBGND
FM-RFI AM-IFI AM-MIXER FM-MIXER VSTABA FM-IF1I AM-IF2I/O FM-IF1O VSTABB
1 2 3 4 5 6
24 RFGND 23 AM-RFI 22 RIPPLE 21 AM-AGC/FM-AFC 20 FM-RFO 19 SUBGND
TDA5710
7 8 9 18 FM-OSC 17 AM-OSC 16 VP 15 IND 14 AM/FM 13 AF
MGE104
TDA5710T
7 8 9 18 FM-OSC 17 AM-OSC 16 VP 15 IND 14 AM/FM 13 AF
MGE105
FM-IF2I 10 IFGND 11 FM-DEM 12
FM-IF2I 10 IFGND 11 FM-DEM 12
Fig.2 Pin configuration TEA5710.
Fig.3 Pin configuration TEA5710T.
FUNCTIONAL DESCRIPTION The TEA5710 incorporates internal stabilized power supplies. The maximum supply voltage is 12 V, the minimum voltage can go down temporarily to 1.8 V without any loss in performance. The AM circuit incorporates a double balanced mixer, a one pin low-voltage oscillator (up to 30 MHz), a field-strength dependent indicator output and is designed for distributed selectivity. The AM input is designed to be connected to the top of a tuned circuit. AGC controls the IF amplification and for large signals it lowers the input impedance. The first AM selectivity can be an IFT as well as an IFT combined with a ceramic filter; the second one is an IFT. The FM circuit incorporates a tuned RF stage, a double balanced mixer, a one-pin oscillator, a field-strength indicator output and is designed for distributed IF ceramic filters. The FM quadrature detector uses a ceramic resonator.
March 1994
5
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VP Tstg Tamb Tj PARAMETER positive supply voltage storage temperature range operating ambient temperature range junction temperature range 0 -55 -15 -15 MIN.
TEA5710; TEA5710T
MAX. 12 +150 +60 +150 V C C C
UNIT
THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER from junction to ambient for SDIL version TEA5710 for SO24L version TEA5710T CIRCUIT DESIGN DATA DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT 69 76 K/W K/W VALUE UNIT
1
FM-RFI
-
0.73
1 24 20
220
MGE114
5 3 k
2
AM-IF1I input
1.4
1.4
2
11
MGE115
March 1994
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Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT
3
3
AM-MIXER output
1.4
1.4
5
MGE116
4
FM-MIXER output
-
1.0
4 680
MGE117
16
5
VSTABA
1.4
1.4
22 5
MGE118
5
120 2.7 k
6
FM-IFI input
6
-
0.73
11
MGE119
March 1994
7
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT
9
7
AM-IF2I/O input/output
7
1.4
1.4
11
MGE120
9
8
FM-IF1O output
-
0.69
8 560
MGE121
16
9
VSTABB
1.4
1.4
22 9
MGE122
9
180 2.2 k
10
FM-IF2I input
10
-
0.73
11
MGE123
11
IFGND
0
0
March 1994
8
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT
180 12
12
FM-DEM
-
1.0
910
11
MGE124
13
AF output
0.6
0.7
13 25 k 5 k 11
MGE125
14
AM/FM switch
1.3
0
14
MGE126
15
15
IND
3.0
3.0
11
MGE127
16
VP
3.0
3.0
17
AM-OSC
0
0
17
19
MGE128
March 1994
9
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT
18
18
FM-OSC
0
0
10 k 21
19
MGE129
19
SUBGND
0
0
20
FM-RFO
0
0
1 24 20
220
MGE114
21
21
AM-AGC/ FM-AFC
0.1
0.7
11
MGE130
March 1994
10
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
DC PIN VOLTAGE (V) PIN NO. PIN SYMBOL AM FM EQUIVALENT CIRCUIT
16
22
22
RIPPLE
2.1
2.1
11
MGE131
23
AM-RFI
0
0
19
23
MGE132
24
RFGND
0
0
1 24 20
220
MGE114
March 1994
11
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
AM CHARACTERISTICS fi = 1 MHz; m = 0.3; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL IP Ci Gc Vin1 Vin2 V13 THD Vin1 IIND IINDOFF PARAMETER supply current input capacitance front-end conversion gain RF sensitivity IF sensitivity AF output voltage total harmonic distortion large signal handling indicator current indicator OFF current CONDITIONS no input signal V21 = 0.2 V V21 = 0.2 V S/N = 26 dB V13 = 30 mV; S1 in position A Vin2 = 3.16 mV; S1 in position A Vin1 = 1 mV m = 0.8; THD 8% Vin2 = 100 mV; S1 in position A Vin2 = 0 V; S1 in position A FM CHARACTERISTICS fi = 100 MHz; f = 22.5 kHz; fm = 1 kHz; VP = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified. SYMBOL IP Vin3 Vin3 V6/Vin3 PARAMETER supply current RF limiting sensitivity RF sensitivity front-end voltage gain CONDITIONS no input signal V13 = -3 dB S/N = 26 dB Vin3 1 mV; including ceramic filter K1 S2 in position B; V13 = -3 dB Vin3 = 1 mV Vin3 = 1 mV; f = 22.5 kHz THD 5% Vin4 = 100 mV; S2 in position B Vin4 = 0 V; S2 in position B MIN. 7.3 0.4 1.0 12 TYP. 9.0 1.2 2.0 18 MAX. 11.2 3.8 3.8 22 UNIT mA V V dB - 0 10 A 2 3.5 6 mA - 150 0.8 300 2.0 - % mV 36 45 70 mV - 1.8 40 0.13 MIN. 5.6 3 3.3 55 0.2 TYP. 7.5 - 5.0 70 0.45 V mV MAX. 9.9 UNIT mA pF
Vin4 V13 THD Vin3 IIND IINDOFF
IF sensitivity AF output voltage total harmonic distortion large signal handling indicator current indicator OFF current
- 47 - - 2 -
20 58 0.3 500 3.5 0
30 69 0.8 - 6 10
V mV % mV mA A
March 1994
12
March 1994
handbook, full pagewidth
Philips Semiconductors
Vin1 18 pF 8.2 pF 22 pF
L2
L3 L4
Rg FM-RF VP CQS54 10 nF FM AM 100 F 10 F 21 20 19 18 17 16 15 14 13 23 22 10 nF Vp AF FM-OSC AM-OSC
43
L8 40 H
(50 )
AM/FM radio receiver circuit
1 MHz
6.8
680 pF
24
13
TEA5710 TEA5710T
2 3 4 5 6 7 8 9 S1 S2 B K1 L6 L5 Rg 330 (50 ) 10.7 MHz Vin4 50 A B K2 A
Vin3
1
10
11
12
Rg
27
1 nF K3
(50 )
100 MHz
560
91
MGE108
Rg
220nF
3 k
(50 )
468 kHz
Vin2
50
to pin 5
TEA5710; TEA5710T
Product specification
Fig.4 Test circuit.
March 1994
handbook, full pagewidth
Philips Semiconductors
APPLICATION INFORMATION
1 2 1 Cc 20 pF CTc 8 pF L4 3 AM-OSC VP HP 32 ON OFF R1 10 R2 10 3V C11 100 F CTd 8 pF FM-OSC C7 22 pF C8 8.2 pF Cd 80 pF Cb 20 pF CTb 8 pF L3 1 C6 18 pF
2
L1 2
Ca 140 pF
CTa 8 pF
L2 1
AM/FM radio receiver circuit
AM-RFI
FM-RFI
C4 10 nF LED CQS54 C5 10 nF AF VP 20 19 18 17 16 15 14 13 8 FM AM
C10 100 F
C2 100 F
C3 10 F
14
TEA5710 TEA5710T
5 6 7 8 9 10 11 12 1 K1 2 3 SFE10.7MS3 SFE10.7MS2 L6 K2 K3 CDA10.7MC40
24
23
22
21
7
6
5
TDA7050T
1 2 3 4
1
2
3
4
C1 4.7 nF
6
1
C9 100 nF
MGE107
CO
22 pF
L7 60 nH
4
2 3
L5
P1 4.7 k
TEA5710; TEA5710T
Product specification
Fig.5 Application circuit of TEA5710 (AM: 522 to 1611 kHz, FM: 87.5 to 108 MHz) with stereo headphone amplifier TDA7050T.
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
MGE109
Fig.6 Printed-circuit board layout (track side) for application circuit of Fig.5.
March 1994
15
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
ANT C1 C12 C2 R2 HP PLUG R3 C11 L6 L5 4.7
GND 100MHz 680
560 27 91
40 H
6.8 43
1MHz
L1
C4 C3 C7
L2
1 K1
ANT F M A M OSC L3 L4 C9
TEA5710
C8 C5
K2 K3 P1
C6
LED
1.5 V C10 GND AF
MGE110
1.5 V
Fig.7 Printed-circuit board layout (component side) for application circuit of Fig.5.
March 1994
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Philips Semiconductors
Product specification
AM/FM radio receiver circuit
Components for Figs 4 and 5 Coils L1 AM-AERIAL ferroceptor length = 6 cm L1-2 = 625 H N1-2 = 105 turns L2 FM-RF L1-2 = 66 nH N1-2 = 2.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0200 L3 FM-OSC L1-2 = 40 nH N1-2 = 1.5 turns unloaded Q = 150 TOKO type S18 TOKO no. 301SS-0100 L4 AM-OSC L1-3 = 270 H N1-2 = 18 N2-3 = 70 unloaded Q = 100 wire diameter 0.07 mm TOKO type 7P material TOKO 7BRS L5 AM-IF1 L1-3 = 625 H N1-2 = 17 turns N2-3 = 141 turns N4-6 = 10 turns C1-3 = 180 pF unloaded Q = 90 wire diameter 0.07 mm TOKO type 7P material TOKO 7MCS L6 AM-IF2 L1-3 = 625 H N1-2 = 28 turns N2-3 = 130 turns C1-3 = 180 pF unloaded Q = 90 wire diameter 0.07 mm TOKO type 7P material TOKO 7MCS
TEA5710; TEA5710T
3 2 1 S
MGE133
L4
3 2 1 S L5
S
4
6
MGE134
3 2 1 S
MGE135
L6
March 1994
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Philips Semiconductors
Product specification
AM/FM radio receiver circuit
L7 FM-AERIAL print-coil L1-2 = 60 nH N1-2 = 2.5 turns L8 AM-RF test circuit only: L1-3 = 40 H N1-3 = 34 turns unloaded Q = 85 wire diameter 0.09 mm TOKO type 7P material TOKO 7BRS Ceramic filters K1 K2 K3 FM-IF1 FM-IF2 FM-DET Murata SFE 10.7 MS 3 Murata SFE 10.7 MS 2 Murata CDA 10.7 MC 40
TEA5710; TEA5710T
3 L8 1 S
MGE136
Capacitors C1 VARICON AM: 140/82 pF FM: 2 x 20 pF trimmer: 4 x 8 pF TOKO type no. HU-22124 Application notes 1. Short circuiting: all pins are short-circuit proof except pin 1 (FM-RFI) with respect to the supply voltage pin. 2. Tuning indicator (at pin 15, IND): connect either a tuning indicator (e.g. a LED) between this pin and the supply voltage (pin 16) or connect the pin IND to ground. 3. For an example of PC-board layout: see Figs 6 and 7.
March 1994
18
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
MGE111
handbook, full pagewidth
0
VAF (dB) 0 dB = 45 mV -10
signal m = 0.3
7 level (mA) THD (%) 6
-20 noise m=0
level
5
-30
4
-40
3
-50
2
-60 THD m = 0.3 -70 10-1 1 10 102 103 104 105
1
Vin1 (V)
0 106
Fig.8
Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of RF input voltage (Vin1; f = 1 kHz). Measured in test circuit of Fig.4 with VP = 3.0 V.
March 1994
19
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
0
MGE112
VAF (dB) 0 dB = 45 mV -10
signal m = 0.3
7 level (mA) THD (%) 6
-20
noise m=0 level
5
-30
4
-40
3
-50
2
-60 THD m = 0.3 -70 1 10 102 103 104 105 106 field-strength (V)
1
0 107
Fig.9
Typical AM audio output voltage (VAF; signal at m = 0.3), noise, THD (at m = 0.3) and indicator current (level) as a function of field-strength (f = 1 kHz). Measured at 1 MHz in application circuit of Fig.5 with VP = 3 V.
March 1994
20
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
handbook, full pagewidth
0
MGE113
VAF (dB) 0 dB = 65 mV -10
signal
7 ind (mA) THD (%) 6
-20
5
-30 noise ind
4
-40
3
-50 THD 22.5 kHz
2
-60
1
-70 10-1
1
10
102
103
104
105
Vin3 (V)
0 106
Fig.10 Typical FM audio output voltage (VAF; signal), noise, THD and indicator current (ind) as a function of RF input voltage (Vin3; df = 22.5 kHz). Measured in test circuit of Fig.4 at VP = 3 V.
March 1994
21
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
PACKAGE OUTLINES SDIP24: plastic shrink dual in-line package; 24 leads (400 mil)
TEA5710; TEA5710T
SOT234-1
D seating plane
ME
A2
A
L
A1 c Z e b 24 13 b1 wM (e 1) MH
pin 1 index E
1
12
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 4.7 A1 min. 0.51 A2 max. 3.8 b 1.3 0.8 b1 0.53 0.40 c 0.32 0.23 D (1) 22.3 21.4 E (1) 9.1 8.7 e 1.778 e1 10.16 L 3.2 2.8 ME 10.7 10.2 MH 12.2 10.5 w 0.18 Z (1) max. 1.6
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT234-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-02-04
March 1994
22
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
TEA5710; TEA5710T
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z
(1)
0.9 0.4
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.043 0.055 0.016
0.035 0.004 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-01-24
March 1994
23
Philips Semiconductors
Product specification
AM/FM radio receiver circuit
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). SDIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
TEA5710; TEA5710T
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
March 1994
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Philips Semiconductors
Product specification
AM/FM radio receiver circuit
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA5710; TEA5710T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1994
25

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